FCI25N60N Datasheet, Fairchild Semiconductor

* RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A
* Ultra Low Gate Charge (Typ. Qg = 57 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 262 pF)

such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D GDS I2-PAK G S MO.

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise pro.